A single-board (one-slot) engineering development station that brings the full test electronics and device cooling of the LC-3. Built for developing test programs, validating boards, and troubleshooting one board at a time.
| Research & development | On devices |
| Testing | Single-board |
| Design | Open, for easy access to test points |
| Signal analysis | Scoping signals on burn-in boards |
| Test programs | Designing and debugging |
| Troubleshooting | Burn-in boards |
| Diagnostics | Running diagnostic tests |
| System compatibility | Use with an accompanying burn-in system, same design configuration |
The LC-3 system is a production-ready burn-in with test system for logic, mixed signal, analog, and memory devices. Combines dynamic burn-in with test, expanded power and temperature control, and cold burn-in capability in one platform.
Designed by engineers and PCB designers experienced in multi-layer board layouts. Each LC-3 board is designed for the device under test and the customer's specific requirements. The device size and complexity determine how many devices will fit per board.
The LC-3 BIB cart streamlines the process of loading and unloading burn-in boards into and from an LC-3 H1 system. This style of cart is designed to be rolled from location to location. When docking to a system, the cart feet must be guided into the docking bracket and the cart pushed in so that the latch mounted on the cart engages with the latch mounted above the oven door. Once the cart is latched into the system, pneumatic cylinders engage and move the cart into positing for loading and unloading burn-in boards from the LC-3.
A connected complete setup of automated loading, mobile robotics, and burn-in systems working as one. Cross platform software synchronizes every handoff, scaling from a single cell to full production.
Burn-in with Individual temperature control (ITC) is the most important development in burn-in technology.
Burn-in is the process that applies elevated temperatures and high voltages to accelerate conditions that will stress semiconductors during what is known as their infant mortality period.
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